 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APT33GF120B2RD APT33GF120LRD 1200V APT33GF120B2RD 52A TO-264 (LRD) Fast IGBT & FRED The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G T-MaxTM (B2RD) * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E C C E APT33GF120LRD G E APT33GF120B2RD/LRD UNIT All Ratings: TC = 25C unless otherwise specified. 1200 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 1200 20 52 33 104 66 300 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT PR EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.5 2 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 2 I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 5.0 100 mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 052-6254 Rev A DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT33GF120B2RD/LRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES I C = I C2 MIN TYP MAX UNIT 1650 230 110 165 20 100 30 140 155 200 28 60 280 30 3.0 3.0 6.0 2200 325 160 250 30 150 nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time RY 8.5 MIN ns IM Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C IN RG =10 A ns Turn-on Switching Energy EL 4 Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 4 mJ PR Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 28 70 250 25 5.0 20 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 4 TJ = +25C VCE = 20V, I C = 25A Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.42 0.90 40 0.22 oz gm C/W Package Weight 6.1 10 lb*in N*m Torque 1 Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 052-6254 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4 APT33GF120B2RD/LRD PRELIMINARY Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 55 A W Ptot 240 IC 45 40 35 30 200 160 25 120 20 15 10 40 5 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 80 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 2 tp = 2.0s 10 s ZthJC 10 -1 100 s 10 1 D = 0.50 1 ms 0.20 10 -2 10 0 10 ms 0.10 0.05 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Bend, Oregon 97702 -1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6254 Rev A VCE tp APT33GF120B2RD/LRD PRELIMINARY Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 55 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 55 A IC 45 40 35 30 25 20 15 10 5 0 1.0 0 17V 15V 13V 11V 9V 7V IC 45 40 35 30 25 20 15 10 5 17V 15V 13V 11V 9V 7V 1.5 2 2.0 4 2.5 6 3.0 V VCE 3.5 10 0 2.0 0 2.5 2 3.0 4 3.5 6 4.0 V VCE 4.5 10 Typ. transfer characteristics IC = f (VGE) parameter: tp=80s,VCE=20 V 60 A 50 IC 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE 052-6254 Rev A EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Bend, Oregon 97702 -1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street Typ. gate charge VGE = (QGate) parameter: IC puls = 26A 25 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 C 600 V 800 V Cies Ciss 10 0 Coss Coes 8 10 -1 6 4 2 0 0 10 -2 0 Cres Crss 20 40 60 80 100 120 140 170 5 10 15 20 25 30 QGate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc/IC(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE APT33GF120B2RD/LRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) All Ratings: TC = 25C unless otherwise specified. APT33GF120B2RD/LRD UNIT 1200 Volts 30 70 210 Amps Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions IN A RY MIN MIN TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C RMS Forward Current TYP MAX UNIT IM IF = 30A IF = 60A IF = 30A, TJ = 150C 2.5 2.0 2.0 Volts VF Maximum Forward Voltage DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 30A, diF /dt = -240A/s, VR = 650V (See Figure 10) Characteristic TYP MAX UNIT PR EL Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/s, VR = 650V Forward Recovery Time IF = 30A, diF /dt = 240A/s, VR = 650V Reverse Recovery Current IF = 30A, diF /dt = -240A/s, VR = 650V Recovery Charge IF = 30A, diF /dt = -240A/s, VR = 650V Forward Recovery Voltage IF = 30A, diF /dt = 240A/s, VR = 650V Rate of Fall of Recovery Current 70 70 160 255 255 7 12 660 85 ns 12 Amps 20 nC 1640 15 Volts 20 A/s 052-6254 Rev A 245 160 APT33GF120B2RD/LRD 100 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 2400 TJ = 100C VR = 650V IF, FORWARD CURRENT (AMPERES) 80 2000 60A 1600 30A 1200 800 400 0 15A 60 TJ = 150C TJ = 25C 20 TJ = 100C TJ = -55C 0 40 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current 50 IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 650V 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 2.0 60A Kf, DYNAMIC PARAMETERS (NORMALIZED) 1.6 40 30A 30 15A 20 RY IRRM trr Qrr -50 TJ = 100C VR = 650V IF = 30A Qrr trr 1.2 10 IM 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Current vs Current Slew Rate 250 TJ = 100C VR = 650V IN 0.4 0.0 2000 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4, Dynamic Parameters vs Junction Temperature 100 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) EL tfr, FORWARD RECOVERY TIME (nano-SECONDS) trr, REVERSE RECOVERY TIME (nano-SECONDS) 200 60A 30A 150 A 1600 0.8 80 Vfr PR 1200 15A 60 100 800 40 50 400 tfr 0 20 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 1.0 0.5 ZJC, THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE 0.1 0.05 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate NOTE: PDM t1 t2 052-6254 Rev A DUTY FACTOR D = t1 / t2 PEAK TJ =PDM x Z JC + TC 0.001 10-5 10-4 1.0 10 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration APT33GF120B2RD/LRD Vr D.U.T. 30H trr/Qrr Waveform 0v -15v 1 2 3 4 IF - Forward Conduction Current PR EL IM IN A RY diF /dt Adjust Figure 25, Diode Reverse Recovery Test Circuit and Waveforms +15v PEARSON 411 CURRENT TRANSFORMER diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Figure 8, Diode Reverse Recovery Waveform and Definitions Qrr = 1/2 (trr . IRRM) T-MAXTM Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector (Cathode) Collector (Cathode) 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Emitter (Anode) Gate Collector (Cathode) Emitter (Anode) 052-6254 Rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) |
Price & Availability of APT33GF120B2RD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |